New OSRAM IR Power Topled with Nanostack chip technology provides 80 percent higher optical output power
November 10, 2011
More light from the same surface area will always be needed if space is tight, if a greater range is required or if light has to be distributed evenly over a greater area. This can often be achieved more flexibly with a large number of small LEDs than with a small number of large LEDs, and price also plays an important role here. The new IR Power Topled has the same package dimensions (footprint) as the standard version and can be used as a drop-in replacement so existing designs can continue to be used. Because of the series circuit, the voltage is higher by approximately a factor of 2.
The IR Power Topled produces an optical output power of 80 mW from an operating current of 70 mA – approximately 80 percent higher than the standard model using the same current. The new LED emits at a wavelength of 850 nm and is therefore a good compromise between maximum spectral sensitivity for CCD and CMOS cameras and suppressed visibility for the human eye. It is available with beam angles of +/-15° (SFH 4258S) and +/-25° (SFH 4259S) from two different lens types.
The new LED is particularly useful for infrared illumination, especially in security systems. In CCTV applications, the range can be increased significantly with the same number of LEDs. The main area of application in the consumer segment is camera-based gaming, as this is where high optical output has the greatest benefit.
According to Dr. Jörg Heerlein, senior marketing manager for the industrial sector, “This powerful infrared Power Topled is an excellent addition to the OSRAM portfolio of LEDs with nanostack technology chips. These high-output IR LEDs provide greater flexibility in designing individual customer solutions.” With its new infrared Power Topled with lens, OSRAM Opto Semiconductors has strengthened its leading position in the mid-range illumination segment.